Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QQ-HCE7000 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 17th Generation |
Power | Normal Power |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18T512160BF-25F | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160BF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160CF-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TC-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TC-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TCL-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TCL-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TF-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T5121618BF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |