图片仅供参考
制造商IC编号 | K4T51163QQ-HCE7000 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 17th Generation |
Power | Normal Power |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
HYB18T512160BF-25F | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160BF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160CF-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TC-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TC-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TCL-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TCL-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TF-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T5121618BF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |