Bilder dienen nur der Illustration
Hersteller-Nummer | K6R4016VIDEP10000 |
Hersteller | SAMSUNG |
Produktkategorie | SRAM |
IC-Code | 256KX16 FAST |
Gehäuse | TBGA-48 |
Verpackung | TRAY |
RoHS | Leaded |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 10 NS |
Standard Stückzahl | |
Abmessungen Karton |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K6R4016V1C/D-EI10/-FI10/- | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1CEI10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI-1000 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI010 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10/EC10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10000 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10L | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10T | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |