图片仅供参考
制造商IC编号 | K6R4016VIDEP10000 |
厂牌 | SAMSUNG/三星 |
IC 类别 | SRAM |
IC代码 | 256KX16 FAST |
脚位/封装 | TBGA-48 |
外包装 | TRAY |
无铅/环保 | 含铅 |
电压(伏) | 3.3 V |
温度规格 | -40 C~+85 C |
速度 | 10 NS |
标准包装数量 | |
标准外箱 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K6R4016V1C/D-EI10/-FI10/- | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1CEI10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI-1000 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI010 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10/EC10 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10000 | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10L | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |
K6R4016V1D-EI10T | TBGA-48 | 3.3 V | 10 NS | -40 C~+85 C |