K9F1G08U0D-HIB0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K9F1G08U0D-HIB0 |
| Hersteller | SAMSUNG |
| Produktkategorie | FLASH-NAND |
| IC-Code | 128MX8 NAND SLC |
Produktbeschreibung
| Gehäuse | FBGA-63 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 2.7V~3.6V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Generation | 5th Generation |
| Pre Prog Version | None |
| Classification | SLC Normal |
| Cust Bad Block | Include Bad Block |
| Mode | Normal |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| TC58NVG0S3EBAI4BBQ | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3EBAI4JRH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3EBAI4LAH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3EBAI4LR0 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3EBAI4LRH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3EBAI4TR | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI4BDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI4JDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |