Bilder dienen nur der Illustration
Hersteller-Nummer | K9F1G08U0E-BIB000 25 |
Hersteller | SAMSUNG |
Produktkategorie | FLASH-NAND |
IC-Code | 128MX8 NAND SLC |
Gehäuse | FBGA-63 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 2.7V~3.6V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 25 NS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Generation | 6th Generation |
Pre Prog Version | None |
Classification | SLC Normal |
Cust Bad Block | Include Bad Block |
Mode | Normal |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
TC58NVG0S3EBAI4BBQ | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4JRH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4LAH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4LR0 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4LRH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4TR | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI4BDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI4JDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |