| Gehäuse |
FBGA-63
|
| Verpackung |
TRAY
|
| RoHS |
RoHS
|
| Spannungsversorgung |
2.7V~3.6V
|
| Betriebstemperatur |
-40 C~+85 C
|
| Geschwindigkeit |
25 NS
|
| Standard Stückzahl |
|
| Abmessungen Karton |
|
GENERAL DESCRIPTION
Offered in 128Mx8bit, the K9F1G08R0B is a 1G -bit NAND Flash Memory with spare 32M-bi t. Its NAND cell provides the most cost-
effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 42ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and
margining of data. Even the write-intensive systems can take advantage of the K9F1G08R0B extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08R0B is an optimum solu-
tion for large nonvolatile storage applicatins such as solid state file storage nd other portable applications requiring nonvolatility.
