Gehäuse |
TSOP-48
|
Verpackung |
TRAY
|
RoHS |
RoHS
|
Spannungsversorgung |
2.7V-3.6V
|
Betriebstemperatur |
0 C~+70 C
|
Geschwindigkeit |
25 NS
|
Standard Stückzahl |
960
|
Abmessungen Karton |
|
Number Of Words |
512M
|
Bit Organization |
x8
|
Density |
4G
|
Generation |
3rd Generation
|
Pre Prog Version |
Serial
|
Classification |
SLC Normal
|
Cust Bad Block |
Include Bad Block
|
Mode |
Normal
|
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A progr am operation can be per-
formed in typical 200 µs on the (2K+64)Byte page and an erase oper ation can be performed in typical 1.5ms on a (128K+4K)Byte
block. Data in the dat a register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data
input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repe-
tition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9F4G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-
out algorithm. The K9F4G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.