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| Hersteller-Nummer | K9F5608Q0C-DCBO |
| Hersteller | SAMSUNG |
| Produktkategorie | FLASH-NAND |
| IC-Code | 32MX8 NAND SLC |
| Gehäuse | TBGA-63 |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 1.70V~1.95V |
| Betriebstemperatur | 0 C~+70 C |
| Geschwindigkeit | 50 NS |
| Standard Stückzahl | 960 |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x8 |
| Density | 256M |
| Pre Prog Version | Serial |
| Generation | 4th Generation |
| Mode | Normal |
| Classification | SLC Normal |
| Cust Bad Block | Include Bad Block |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K9F5608Q0B-DCB0 | TBGA-63 | 1.70V~1.95V | 50 NS | 0 C~+70 C |
| K9F5608Q0B-DCB0000 | TBGA-63 | 1.70V~1.95V | 50 NS | 0 C~+70 C |
| K9F5608QOB-DCBO | TBGA-63 | 1.70V~1.95V | 50 NS | 0 C~+70 C |
| K9F5608QOC-DCBO | TBGA-63 | 1.70V~1.95V | 50 NS | 0 C~+70 C |
| K9F5608QOC-DIB/DCB | TBGA-63 | 1.70V~1.95V | 50 NS | 0 C~+70 C |
| K9F5608QOCDCBODIBO | TBGA-63 | 1.70V~1.95V | 50 NS | 0 C~+70 C |