Bilder dienen nur der Illustration
Hersteller-Nummer | K9HBG08U1MPIB0 |
Hersteller | SAMSUNG |
Produktkategorie | FLASH-NAND |
IC-Code | 4GX8 NAND MLC |
Andere Bezeichnungen | K9HBG08U1M-PIB0T00 |
Gehäuse | TSOP |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 2.7V-3.6V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 4G |
Bit Organization | x8 |
Density | 32G |
Generation | 1st Generation |
Pre Prog Version | None |
Classification | MLC QDP |
Cust Bad Block | Include Bad Block |
Mode | Dual nCE & Dual R/nB |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K9HBG08U1MPIB0 | 4.000 | Anfrage senden | |
K9HBG08U1MPIB0 | 2.000 | 2012+ | Anfrage senden |
K9HBG08U1MPIB0 | 184 | 8 | Anfrage senden |
K9HBG08U1MPIB0 | 8.000 | Anfrage senden | |
K9HBG08U1MPIB0 | 4.000 | Anfrage senden | |
K9HBG08U1MPIB0 | 1.064 | 2009+ | Anfrage senden |
K9HBG08U1MPIB0 | 1.064 | 09+ | Anfrage senden |