K9HBG08U1MPIB0
产品概述
图片仅供参考
| 制造商IC编号 | K9HBG08U1MPIB0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | FLASH-NAND |
| IC代码 | 4GX8 NAND MLC |
| 共通IC编号 | K9HBG08U1M-PIB0T00 |
产品详情
| 脚位/封装 | TSOP |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 2.7V-3.6V |
| 温度规格 | -40 C~+85 C |
| 速度 | |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 4G |
| Bit Organization | x8 |
| Density | 32G |
| Generation | 1st Generation |
| Pre Prog Version | None |
| Classification | MLC QDP |
| Cust Bad Block | Include Bad Block |
| Mode | Dual nCE & Dual R/nB |