K9K1208Q0C-DIBO
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K9K1208Q0C-DIBO |
| Hersteller | SAMSUNG |
| Produktkategorie | FLASH-NAND |
| IC-Code | 64MX8 NAND SLC |
Produktbeschreibung
| Gehäuse | TBGA-63 |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 42 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Pre Prog Version | Serial |
| Generation | 4th Generation |
| Mode | Normal |
| Classification | SLC DDP |
| Cust Bad Block | Include Bad Block |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K9K1208Q0C-DIBO | 5.500 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K9F1208Q0C-DIB0 | TBGA-63 | 1.70V~1.95V | 42 NS | -40 C~+85 C |
| K9F1208Q0C-DIBO | TBGA-63 | 1.70V~1.95V | 42 NS | -40 C~+85 C |
| K9F1208QOB-DIBO | TBGA-63 | 1.70V~1.95V | 42 NS | -40 C~+85 C |
| K9K1208Q0C-DIB | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |
| K9K1208Q0C-DIB000 | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |
| K9K1208Q0C-DIB000 25 | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |
| K9K1208Q0C-DIB0000 | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |
| K9K1208Q0C-DIB0T00 | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |
| K9K1208Q0C-JIB0/DIB0 | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |
| K9K1208Q0CDIB0 | TBGA-63 | 1.8 V | 42 NS | -40 C~+85 C |