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Hersteller-Nummer | MT29F2G08ABAEAH4-IT:E |
Hersteller | MICRON |
Produktkategorie | FLASH-NAND |
IC-Code | 256MX8 NAND SLC |
Andere Bezeichnungen | MT29F2G08ABAEAH4-IT:E ROHS |
MT29F2G08ABAEAH4-IT:E TR | |
MT29F2G08ABAEAH4-ITE |
Gehäuse | VFBGA-63 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 25 NS |
Standard Stückzahl | 1260 |
Abmessungen Karton | |
Number Of Words | 256M |
Bit Organization | x8 |
Density | 2G |
Production Status | Production |
Package Material | Pb-free |
Interface | Async only |
Level | SLC |
Speed Grade | Async only |
Design Revision | E |
Package | VFBGA(63-ball , 9 x 11 x 1.0) |
Classification | 1-1-1-1 (Die-nCE-RnB-IO Channels) |
General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC enabled. See Internal ECC and Spare Area Mapping for ECC for more information.
Teilenummer | Menge | Datecode | |
---|---|---|---|
MT29F2G08ABAEAH4-IT:E | 20.000 | 23+ | Anfrage senden |
MT29F2G08ABAEAH4-IT:E | 20.000 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E TR | 26.000 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E | 3.049 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E | 4.000 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E | 3.780 | 2022+ | Anfrage senden |
MT29F2G08ABAEAH4-IT:E | 10.000 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E | 651 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E | 11.048 | Anfrage senden | |
MT29F2G08ABAEAH4-IT:E | 10.000 | 2023+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K9F2G08U0D-5IB0000 | FBGA-63 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
F59L2G81KA-25BIG2N | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
F59L2G81XA-25BIG2B | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML02G081-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML02G081-BLI-TR | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML02G081-BLI/IS34ML02G081- | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML02G084-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34MLI02G084-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS35ML02G081-BLA | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS35ML02G081-BLA1 | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS35ML02G081-BLAX | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |