MT49H16M36SJ-18:B

General Description RLDRAM® 2 is a high-speed memory device designed for high bandwidth data storage, telecommunications, networking, and cache applications, etc. The chip’s 8-bank architecture is optimized for sustainable high-speed operation. The DDR I/O interface transfers two data words per clock cycle at the I/O balls. Output data is referenced to the free-running output data clock. Commands, addresses, and control signals are registered at every positive edge of the differential input clock, while input data is registered at both positive and negative edges of the input data clock(s). Read and write accesses are burst-oriented. The burst length (BL) is programmable from 2, 4, or 8 by setting the mode register. The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output drivers. Bank-scheduled refresh is supported with the row address generated internally. The μBGA 144-ball package enables ultra high-speed data transfer rates and a simple upgrade path from early generation devices.

• 1
• 2
• 3
• 4
• 5
• …
• Nächste ›
• Letzte »