| 脚位/封装 |
FBGA-144
|
| 外包装 |
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
1.8 V
|
| 温度规格 |
0 C~+85 C
|
| 速度 |
533 MHZ
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
16M
|
| Bit Organization |
x36
|
| Density |
576M
|
| Max Clock Frequency |
533 MHz
|
| Production Status |
Production
|
| Product Family |
RLDRAM 1 & 2 Memory
|
| Version |
S
|
| Die Revision |
B
|
General Description
RLDRAM® 2 is a high-speed memory device designed for high bandwidth data storage,
telecommunications, networking, and cache applications, etc. The chip’s 8-bank architecture is optimized for sustainable high-speed operation.
The DDR I/O interface transfers two data words per clock cycle at the I/O balls. Output
data is referenced to the free-running output data clock.
Commands, addresses, and control signals are registered at every positive edge of the
differential input clock, while input data is registered at both positive and negative
edges of the input data clock(s).
Read and write accesses are burst-oriented. The burst length (BL) is programmable
from 2, 4, or 8 by setting the mode register.
The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output
drivers.
Bank-scheduled refresh is supported with the row address generated internally.
The μBGA 144-ball package enables ultra high-speed data transfer rates and a simple
upgrade path from early generation devices.
