Gehäuse | TSOP2(24/26) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+70 C |
Geschwindigkeit | 50 NS |
Standard Stückzahl | |
Abmessungen Karton |
GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the column address 4 Meg x 4 EDO DRAM D47.p65 – Rev.
Teilenummer | Menge | Datecode | |
---|---|---|---|
MT4LC4M4E8TG-50 | 6.000 | 05+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
A42L2604V-50 | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
GM71V17403CT-5 | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
GM71V17403CT-50 | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
GM71VS17403CLT-5 | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
HY51V17404BT-50 | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
HY51V17404CT-50 | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
IS41LV44002B-50CTG | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
IS41LV44002B-50CTG-TR | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
IS41LV44002B-50T | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |
IS41LV44002B-50T-TR | TSOP2(24/26) | 3.3 V | 50 NS | 0 C~+70 C |