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| Hersteller-Nummer | MT53E256M32D1KS046WTLZ41M |
| Hersteller | MICRON |
| Produktkategorie | LPDDR4 SDRAM |
| IC-Code | 256MX32 LPDDR4 |
| Gehäuse | VFBGA-200 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.1 V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 4266 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 256M |
| Bit Organization | x32 |
| Density | 8G |
| Version | D1 |
| Max Clock Frequency | 2133 MHz |
| Production Status | Production |
| Product Family | Mobile LPDDR4 (2x16 ch/die) |
| Die Revision | L |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| MT53E256M32D1KS046WTLZ41M | 2.851 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H9HCNNN8GUALHR-NEE | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E164HA-MGCL | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E164HA-MGCL000 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E164HA-MGCLT00 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGC | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL SAMSUNG | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL000 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL0JP | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCLT00 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |