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| Hersteller-Nummer | H9HCNNN8GUALHR-NEE |
| Hersteller | SK HYNIX |
| Produktkategorie | LPDDR4 SDRAM |
| IC-Code | 256MX32 LPDDR4 |
| Gehäuse | FBGA-200 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.1 V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 4266 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Package Material | Lead & Halogen Free |
| Hynix Memory | H |
| Product Mode | LPDDR4 Only |
| Generation | 2nd |
| Dram Voltage | 1.1V/1.1V,LPDDR4 |
| Nvm Option | None |
| Dram Density | 8Gb, SDP |
| Nvm Speed | none |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| H9HCNNN8GUALHR-NEE | 4.483 | Anfrage senden | |
| H9HCNNN8GUALHR-NEE | 4.483 | 2020+ | Anfrage senden |
| H9HCNNN8GUALHR-NEE | 6.238 | Anfrage senden | |
| H9HCNNN8GUALHR-NEE | 615 | 2020+ | Anfrage senden |
| H9HCNNN8GUALHR-NEE | 300 | 19+ | Anfrage senden |
| H9HCNNN8GUALHR-NEE | 5.000 | - | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4F8E164HA-MGCL | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E164HA-MGCL000 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E164HA-MGCLT00 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGC | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL SAMSUNG | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL000 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCL0JP | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| K4F8E3S4HD-MGCLT00 | FBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |
| MT53E256M32D1KS-046 WT:L | VFBGA-200 | 1.1 V | 4266 MBPS | -25 C~+85 C |