H9HCNNN8GUALHR-NEE

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No H9HCNNN8GUALHR-NEE
Brand SK HYNIX
Item LPDDR4 SDRAM
Part No 256MX32 LPDDR4

Product Details

Package FBGA-200
Outpack
RoHS RoHS
Voltage 1.1 V
Temperature -25 C~+85 C
Speed 4266 MBPS
Std. Pack Qty
Std. Carton
Package Material Lead & Halogen Free
Hynix Memory H
Product Mode LPDDR4 Only
Generation 2nd
Dram Voltage 1.1V/1.1V,LPDDR4
Nvm Option None
Dram Density 8Gb, SDP
Nvm Speed none

Available Offers

Description Qty Datecode
H9HCNNN8GUALHR-NEE 4,483 Get Quote
H9HCNNN8GUALHR-NEE 4,483 2020+ Get Quote
H9HCNNN8GUALHR-NEE 6,238 Get Quote
H9HCNNN8GUALHR-NEE 615 2020+ Get Quote
H9HCNNN8GUALHR-NEE 300 19+ Get Quote
H9HCNNN8GUALHR-NEE 5,000 - Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4F8E164HA-MGCL FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E164HA-MGCL000 FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E164HA-MGCLT00 FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E3S4HD-MGC FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E3S4HD-MGCL FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E3S4HD-MGCL SAMSUNG FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E3S4HD-MGCL000 FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E3S4HD-MGCL0JP FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
K4F8E3S4HD-MGCLT00 FBGA-200 1.1 V 4266 MBPS -25 C~+85 C
MT53E256M32D1KS-046 WT:L VFBGA-200 1.1 V 4266 MBPS -25 C~+85 C