Gehäuse |
SOP-8
|
Verpackung |
TUBE
|
RoHS |
RoHS
|
Spannungsversorgung |
3.3 V
|
Betriebstemperatur |
-40 C~+85 C
|
Geschwindigkeit |
133 MHZ
|
Standard Stückzahl |
92
|
Abmessungen Karton |
|
Density |
32M
|
Temperature Range |
industrial (-40°C to 85°C)
|
Option |
RoHS compliant and halogen-free
|
Mode |
33F
|
Type |
3V
|
Macronix Designator |
MX
|
GENERAL DESCRIPTION
MX25L3233F is 32Mb bits Serial NOR Flash memory, which is configured as 4,194,304 x 8 internally. When it is
in four I/O mode, the structure becomes 8,388,608 bits x 4. When it is in two I/O mode, the structure becomes
16,777,216 bits x 2.
MX25L3233F features a serial peripheral interface and software protocol allowing operation on a simple 3-wire
bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a
serial data output (SO). Serial access to the device is enabled by CS# input.
MX25L3233F, MXSMIO® (Serial Multi I/O) flash memory, provides sequential read operation on the whole chip
and multi-I/O features.
When it is in quad I/O mode, the SI pin, SO pin, WP# pin and HOLD# pin become SIO0 pin, SIO1 pin, SIO2 pin
and SIO3 pin for address/dummy bits input and data Input/Output.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis. Erase command is executed on 4K-byte sector, 32K-byte/64K-byte block, or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status
read command can be issued to detect completion status of a program or erase operation via WIP bit.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L3233F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.