TC58NVG0S8HBAI6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | TC58NVG0S8HBAI6 |
| Hersteller | KIOXIA |
| Produktkategorie | FLASH-NAND |
| IC-Code | 128MX8 NAND SLC |
Produktbeschreibung
| Gehäuse | BGA-67 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Mono Stack | Single Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 2KB |
| Design Rule | 24nm B-type |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 128KB |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| F59L1G81MA -25BCIG2Y | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200GFI000 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200GHI000 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| S34ML01G200GHI003 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58BVG0S3HBAI6 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58DVG02D5BAI6 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI6 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI6 / CMP: MEM | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI6 TRAY | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
| TC58NVG0S3HBAI6JDH | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |