TC58NYG1S8HBAI6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | TC58NYG1S8HBAI6 |
| Hersteller | KIOXIA |
| Produktkategorie | FLASH-NAND |
| IC-Code | 256MX8 NAND SLC |
Produktbeschreibung
| Gehäuse | BGA-67 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Mono Stack | Single Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 2KB |
| Design Rule | 24nm B-type |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 128KB |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| TC58NYG1S8HBAI6 | 607 | 13+ | Anfrage senden |
| TC58NYG1S8HBAI6 | 155 | 14+ | Anfrage senden |
| TC58NYG1S8HBAI6 | 3.997 | 1407+ | Anfrage senden |
| TC58NYG1S8HBAI6 | 4.024 | 13+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| TC58BYG1S3HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6,TSB | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6JDH | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6YCL | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S3HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S3HBAI6YCL | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S8HBAI6/2GBIT | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |