TC58NYG1S8HBAI6
产品概述
图片仅供参考
| 制造商IC编号 | TC58NYG1S8HBAI6 |
| 厂牌 | KIOXIA/鎧俠 |
| IC 类别 | FLASH-NAND |
| IC代码 | 256MX8 NAND SLC |
产品详情
| 脚位/封装 | BGA-67 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 25 NS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Mono Stack | Single Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 2KB |
| Design Rule | 24nm B-type |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 128KB |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| TC58BYG1S3HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6,TSB | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6JDH | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6YCL | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S3HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S3HBAI6YCL | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S8HBAI6/2GBIT | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |