| HYS72T64400EFD-3S-B2 |
QIMONDA |
DIMM MODULE |
40
|
DIMM MODULE / 512MB DDR2 DIMM / 240-PIN / Leaded / 39*31*7 cm |
| EDS2532AABH-1AR2-E |
MICRON |
SDRAM |
115,235
|
SDRAM / 8MX32 SD / FBGA-90 / 100 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 680 pcs 1.0 kg 37*17.5*7.5 cm |
| AT45DB011D-SH-B |
DIALOG/ADESTO |
DATA FLASH |
693
|
DATA FLASH / 45DB011 / SOIC-8 / 25 MA / -40 C~+85 C / RoHS / 2.7V~3.6V / TUBE / EOL / 90 pcs |
| AT45DB081D-SU |
DIALOG/ADESTO |
DATA FLASH |
462
|
DATA FLASH / 45DB081 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 1.70V~3.6V / TUBE / 90 pcs |
| EDD1216AASE-6B-E |
MICRON |
DDR1 SDRAM |
55,639
|
DDR1 SDRAM / 8MX16 DDR1 / FBGA-60 / 166 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY / 1045 pcs 1.3 kg 37*17.5*7.5 cm |
| K4X28163PN-TGC3T00 |
SAMSUNG |
LPDDR1 MOBILE |
161,880
|
LPDDR1 MOBILE / 8MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25 C~+70 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 pcs 1.0 kg 36*35*7 cm |
| K4S561632N-LC75000 |
SAMSUNG |
SDRAM |
960
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.6 kg 38*19*11 cm |
| IS61WV20488BLL-10TLI |
ISSI |
SRAM-ASYNC |
15
|
SRAM-ASYNC / 2MX8 FAST / TSOP2(44) / 10 NS / -40 C~+85 C / RoHS / 2.2V-3.6V / TRAY / 1350 pcs |
| IS43TR16256AL-125KBL |
ISSI |
DDR3L SDRAM |
15
|
DDR3L SDRAM / 256MX16 DDR3L / BGA-96 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V/1.5V / TRAY / EOL / 1900 pcs |
| IS42S86400D-7TLI |
ISSI |
SDRAM |
15
|
SDRAM / 64MX8 SD / TSOP2(54) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| W971GG6JB-25 |
WINBOND |
DDR2 SDRAM |
9
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1672 pcs 1.5 kg 37*16*7 cm |
| EDS1216AABH-75-E |
MICRON |
SDRAM |
20
|
SDRAM / 8MX16 SD / FBGA-54 / 133 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1595 pcs 1.5 kg 38*18*8 cm |
| W9812G6IH-6-TR |
WINBOND |
SDRAM |
20
|
SDRAM / 8MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+70 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1500 pcs 1.8 kg 38*36*8 cm |
| K9F1G08U0C-PIB0 |
SAMSUNG |
FLASH-NAND |
13
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / EOL / 960 pcs 2.6 kg 38*19*11 cm |
| 01-AS-074-00P |
MICROCHIP |
ASIC |
62
|
ASIC / 58A45 / QFN-48 / Leaded / TRAY |
| 01-AS-073-00P |
MICROCHIP |
ASIC |
5,756
|
ASIC / 58A45 / QFN-48PIN / Leaded / TRAY / 1000 pcs |
| IS42S32200B-7T-TR |
ISSI |
SDRAM |
3,750
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / Leaded / 3.3 V / TAPE ON REEL / 1500 pcs |
| CY75FCT163646CPVCT |
CYPRESS |
OTHER |
2,000
|
OTHER / 75FCT163646 / Leaded / TAPE ON REEL / 1000 pcs |
| MMCRE28G5MXP-0VB00 |
SAMSUNG |
HARD-DISC-FLASH /SSD |
8
|
HARD-DISC-FLASH /SSD / 128GB SSD / RoHS |
| MMDOE56G5MXP-0VB00 |
SAMSUNG |
HARD-DISC-FLASH /SSD |
6
|
HARD-DISC-FLASH /SSD / 256GB SSD / RoHS |
| M29F040B-120K1 |
MICRON |
FLASH-NOR |
31,712
|
FLASH-NOR / 29F040 / PLCC-32 / 120 NS / 0 C~+70 C / Leaded / 5.0 V / TUBE / 320 pcs 0.5 kg |
| AM29LV400BB-120EC |
INFINEON+CYPRESS |
FLASH-NOR |
24
|
FLASH-NOR / 29LV400 BOTTOM / TSOP-48 / 120 NS / 0 C~+70 C / Leaded / 3.3 V / TRAY / 480 pcs 1.6 kg 40*19*12 cm |
| K4S511632D-UC75T00 |
SAMSUNG |
SDRAM |
10
|
SDRAM / 32MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.3 kg 36*34*7 cm |
| AM79C961AKC |
AMD |
CONTROLLER |
5
|
CONTROLLER / 79C961 / PQFP-132 / 0 C~+70 C / Leaded / 4.75V-5.25 / TRAY |
| IS62WV12816BLL-55B2I |
ISSI |
SRAM-ASYNC |
37
|
SRAM-ASYNC / 128KX16 SLOW / MBGA-48 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V |