H5TQ4G63MFR-PBC

Description The H5TQ4G83MFR-xxC,H5TQ4G63MFR-xxC, H5TQ4G83MFR-xxI, H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxJ and H5TQ4G63MFR-xxJ are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

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