K4B2G0846C-HYF8

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4B2G0846C-HYF8
Brand SAMSUNG
Item DDR3 SDRAM
Part No 256MX8 DDR3
Alternate Names K4B2G0846C-HYF8000

Product Details

Package FBGA-78
Outpack
RoHS RoHS
Voltage 1.5 V
Temperature 0 C~+85 C
Speed 1066 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 256M
Bit Organization x8
Density 2G
Internal Banks 8 Banks
Generation 4th Generation
Power Low VDD(1.35V)

Available Offers

Description Qty Datecode
K4B2G0846C-HYF8 4,000 Get Quote
K4B2G0846C-HYF8 2,820 Get Quote
K4B2G0846C-HYF8 2,000 2009+ Get Quote
K4B2G0846C-HYF8000 11,319 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
MT41J256M8HX-187ED FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8HX-187EDTR FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8JE-187E FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8JE-187E ES:A FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8JE-187E:A FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8THR-187E FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8THR-187E ES:D FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8THR-187E:D FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8THV-187E ES:F FBGA-78 1.5 V 1066 MBPS 0 C~+85 C
MT41J256M8THV-187E:F FBGA-78 1.5 V 1066 MBPS 0 C~+85 C