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Manufacturer Part No | K4B4G0846E-BMM0 |
Brand | SAMSUNG |
Item | DDR3L SDRAM |
Part No | 512MX8 DDR3L |
Package | FBGA-78 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.35V |
Temperature | -40 C~+95 C |
Speed | 1866 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT41K512M8DA-107ITP | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107XIT:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8RH-107 AIT ES:E | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8RH-107 AIT:E | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8RH-107 IT ES:E | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8RH-107 IT:E | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8RH-107IT | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
NT5CC512M8DN-EKI | TFBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
NT5CC512M8EQ-EK TR | TFBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
NT5CC512M8EQ-EKI | TFBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |