K4B4G0846Q-HCK0

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4B4G0846Q-HCK0
Brand SAMSUNG
Item DDR3 SDRAM
Part No 512MX8 DDR3

Product Details

Package FBGA-78
Outpack TRAY
RoHS RoHS
Voltage 1.5 V
Temperature 0 C~+85 C
Speed 1600 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 512M
Bit Organization x8
Density 4G
Internal Banks 8 Banks
Generation 17th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4B4G0846Q-HCK0 2,000 Get Quote
K4B4G0846Q-HCK0 10,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IS43TR85120EC-125KBLC BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120EC-125LB BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120EC-125LBL BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120EC-125LBLC BGA-78 1.5 V 1600 MBPS 0 C~+85 C
IS43TR85120ECL BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120ECL-125KB BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120ECL-125KBL BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120ECL-125KBLC BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120ECL-125LB BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C
IS43TR85120ECL-125LBL BGA-78 1.35V/1.5V 1600 MBPS 0 C~+85 C