K4B4G0846Q-HYH90

Product Overview

IC Picture

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Manufacturer Part No K4B4G0846Q-HYH90
Brand SAMSUNG
Item DDR3 SDRAM
Part No 512MX8 DDR3L

Product Details

Package FBGA-78
Outpack TRAY
RoHS RoHS
Voltage 1.35V
Temperature 0 C~+85 C
Speed 1333 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 512M
Bit Organization x8
Density 4G
Internal Banks 8 Banks
Generation 17th Generation
Power Low VDD(1.35V)

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4B4G0846B-HYH9000 FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RA-15E FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RA-15E ES:D FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RA-15E M ES:D FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RA-15E M:D FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RA-15E:D FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RA-15EM FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RH-15E ES:E FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RH-15E ES:J FBGA-78 1.35V 1333 MBPS 0 C~+85 C
MT41K512M8RH-15E M:E FBGA-78 1.35V 1333 MBPS 0 C~+85 C