K4E151612D-T-6

Product Overview

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Manufacturer Part No K4E151612D-T-6
Brand SAMSUNG
Item DRAM
Part No 1MX16 EDO
Alternate Names K4E151612DT60

Product Details

Package TSOP2(44/50)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

Available Offers

Description Qty Datecode
K4E151612DT60 1,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
HY51V18164CJC-60 T/R TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
HY51V18164CJC-60T TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IC41LV1610060T TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IC41LV16100A-60T TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IC41LV16100S-60T TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IC41LV16100S-60TG TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IC41LV16100S-60TOR TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IS41LV16100(S)-50/60 TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IS41LV16100-60LT TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C
IS41LV16100-60T TSOP2(44/50) 3.3 V 60 NS 0 C~+85 C