K4E160411C-BC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160411C-BC50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO

Product Details

Package SOJ-24/26
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x4
Density 16M
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E160411C-BC50 12,000 Get Quote
K4E160411C-BC50 10,000 2003+ Get Quote
K4E160411C-BC50 20,000 2003+ Get Quote
K4E160411C-BC50 18,000 2003+ Get Quote
K4E160411C-BC50 6,988 2003+ Get Quote
K4E160411C-BC50 9,400 2003+ Get Quote
K4E160411C-BC50 10,850 03+ Get Quote
K4E160411C-BC50 5,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
HY5116404CJ-50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
HY5117404BJ-50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
HY5117404CJ-50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
IS41C44002-50JL SOJ-24/26 5.0 V 50 NS 0 C~+85 C
K4E160411C-BL50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
K4E160411C-JC50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
K4E160411D-BC50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
K4E160411D-BC50000 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
K4E160411D-BL50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C
K4E160411D-JC50 SOJ-24/26 5.0 V 50 NS 0 C~+85 C