K4E160411D-FL50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160411D-FL50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO

Product Details

Package TSOP2(24/26)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x4
Density 16M
Power Low Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E160411D-FL50 6,500 Get Quote
K4E160411D-FL50 12,000 Get Quote
K4E160411D-FL50 10,000 2003+ Get Quote
K4E160411D-FL50 20,000 2003+ Get Quote
K4E160411D-FL50 18,209 2003+ Get Quote
K4E160411D-FL50 6,988 2003+ Get Quote
K4E160411D-FL50 17,000 2003+ Get Quote
K4E160411D-FL50 10,850 03+ Get Quote
K4E160411D-FL50 5,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
HY5117404BT-5 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C
HY5117404BT-50 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C
HY5117404CT-5 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C
HY5117404CT-50 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C
K4E160411C-FC50 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C
K4E160411C-FL50 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C
K4E160411D-FC50 TSOP2(24/26) 5.0 V 50 NS 0 C~+85 C