K4E160811C-FL50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160811C-FL50
Brand SAMSUNG
Item DRAM
Part No 2MX8 EDO

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x8
Density 16M
Generation 4th Generation
Power Low Power

Available Offers

Description Qty Datecode
K4E160811C-FL50 4,000 Get Quote
K4E160811C-FL50 2,258 2006+ Get Quote
K4E160811C-FL50 8,336 2005+ Get Quote
K4E160811C-FL50 12,000 Get Quote
K4E160811C-FL50 10,000 2003+ Get Quote
K4E160811C-FL50 20,000 2003+ Get Quote
K4E160811C-FL50 6,988 2003+ Get Quote
K4E160811C-FL50 2,000 Get Quote
K4E160811C-FL50 13,990 2003+ Get Quote
K4E160811C-FL50 10,860 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160811C-BL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4E160811D-BL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4E160811D-FL50 FBGA 5.0 V 50 NS 0 C~+85 C