K4E160812C-BC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160812C-BC50
Brand SAMSUNG
Item DRAM
Part No 2MX8 EDO

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x8
Density 16M
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E160812C-BC50 6,500 Get Quote
K4E160812C-BC50 2,258 2006+ Get Quote
K4E160812C-BC50 8,336 2005+ Get Quote
K4E160812C-BC50 12,000 Get Quote
K4E160812C-BC50 10,000 2003+ Get Quote
K4E160812C-BC50 20,000 2003+ Get Quote
K4E160812C-BC50 13,000 2003+ Get Quote
K4E160812C-BC50 6,988 2003+ Get Quote
K4E160812C-BC50 14,900 2003+ Get Quote
K4E160812C-BC50 5,000 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160812C-BL50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160812C-FL50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160812D-BL50 FBGA 3.3 V 50 NS 0 C~+85 C
K4E160812D-FL50 FBGA 3.3 V 50 NS 0 C~+85 C