K4E160812D

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E160812D
Brand SAMSUNG
Item DRAM
Part No 2MX8 EDO

Product Details

Package
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+70 C
Speed
Std. Pack Qty
Std. Carton

Available Offers

Description Qty Datecode
K4E160812D 10,000 1999+ Get Quote
K4E160812D 2,258 2005+ Get Quote
K4E160812D 8,336 2005+ Get Quote
K4E160812D 12,000 Get Quote
K4E160812D 10,000 Get Quote