K4E170412C-BC60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E170412C-BC60
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO
Alternate Names K4E170412C-BC60000

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Bit Organization x4
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E170412C-BC60 5,500 Get Quote
K4E170412C-BC60 5,400 2003+ Get Quote
K4E170412C-BC60 8,336 05+ Get Quote
K4E170412C-BC60 8,336 2005+ Get Quote
K4E170412C-BC60 12,000 Get Quote
K4E170412C-BC60 2,130 2002+ Get Quote
K4E170412C-BC60 5,000 2003+ Get Quote
K4E170412C-BC60 2,000 Get Quote
K4E170412C-BC60000 2,389 00 Get Quote
K4E170412C-BC60000 2,389 00++ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160412C-BC60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E160412C-BL60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E160412C-FL60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E160412D-BL60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E160412D-FC5 OR 6 FBGA 3.3 V 60 NS 0 C~+85 C
K4E160412D-FL60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E170412B-FL60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E170412D-BC60 FBGA 3.3 V 60 NS 0 C~+85 C
K4E170412D-BC60000 FBGA 3.3 V 60 NS 0 C~+85 C