K4E170412D-TC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E170412D-TC50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO
Alternate Names K4E170412DTC5060

Product Details

Package TSOP2(24/26)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x4
Power Normal Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E170412DTC5060 12,000 Get Quote
K4E170412DTC5060 13,800 Get Quote
K4E170412D-TC50 1,000 00+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IC41LV44004-50T TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
IS41LV44002B-50TL TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412C-FC50 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412D-BC50T TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412D-BC50T00 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412D-DC50TOO TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412D-FC5 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412D-FC50 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E160412D-FC50000 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C
K4E170412C-FC50 TSOP2(24/26) 3.3 V 50 NS 0 C~+85 C