K4E170412D-TC6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E170412D-TC6
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO

Product Details

Package TSOP2(24/26)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Bit Organization x4
Power Normal Power
Generation 5th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E160412C-FC60 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E160412D-FC6 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E160412D-FC60 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412C-FC60000 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412D-FC6 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412D-FC60 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412D-FC6000 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412D-FC60000 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412D-FC60000SAM TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C
K4E170412D-FC60T00 TSOP2(24/26) 3.3 V 60 NS 0 C~+85 C