K4E171612C-TP5

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E171612C-TP5
Brand SAMSUNG
Item DRAM
Part No 1MX16 EDO
Alternate Names K4E171612C-TP50
K4E171612C-TP50T0

Product Details

Package TSOP2(44/50)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x16
Power Low Power
Generation 4th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
A42L0616V-50/IC TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
A42L0616V-50U/IC TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
A42L0616V50UF TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
AS4LC1M16E5-50TC(I) TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
AS4LC1M16E5-50TI TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
IC41LV16100-50TI TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
IC41LV16100S-50TI TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
IC41LV16100S-50TIG TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
IC41LV16100S0-50TI TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C
IS41LV16100-50TI TSOP2(44/50) 3.3 V 50 NS -40 C~+85 C