K4E641611C-TI60

Product Overview

IC Picture

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Manufacturer Part No K4E641611C-TI60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage
Temperature -40 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E641611C-TI60 12,000 Get Quote
K4E641611C-TI60 10,000 2003+ Get Quote
K4E641611C-TI60 20,000 2003+ Get Quote
K4E641611C-TI60 14,900 2003+ Get Quote
K4E641611C-TI60 8,020 03+ Get Quote