K4E641611C-TL60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E641611C-TL60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Low Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E641611C-TL60 4,000 Get Quote
K4E641611C-TL60 2,258 2006+ Get Quote
K4E641611C-TL60 8,336 05+ Get Quote
K4E641611C-TL60 12,000 Get Quote
K4E641611C-TL60 8,336 2005+ Get Quote
K4E641611C-TL60 10,000 2003+ Get Quote
K4E641611C-TL60 20,000 2003+ Get Quote
K4E641611C-TL60 9,000 2003+ Get Quote
K4E641611C-TL60 2,500 04+ Get Quote
K4E641611C-TL60 13,800 2003+ Get Quote