K4E641612BTC60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E641612BTC60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E641612B-TC60T00

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal Power
Generation 3rd Generation

Available Offers

Description Qty Datecode
K4E641612BTC60 2,258 2006+ Get Quote
K4E641612BTC60 12,000 Get Quote
K4E641612BTC60 8,336 2005+ Get Quote
K4E641612BTC60 2,000 2000+ Get Quote
K4E641612BTC60 7,800 Get Quote
K4E641612BTC60 6,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K.4E641612D-PCTC-60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612-TC60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612-TL60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E6416120TC60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612B-TL60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C -GL60T00 #160 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C-CT-60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C-GL160 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C-GL160N TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C-GL60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C