K4E641612E-TC11

Product Overview

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Manufacturer Part No K4E641612E-TC11
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal Power
Generation 6th Generation