K4E661611B-TL60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E661611B-TL60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Bit Organization x16
Power Low Power
Generation 3rd Generation

Available Offers

Description Qty Datecode
K4E661611B-TL60 12,000 Get Quote
K4E661611B-TL60 5,000 2003+ Get Quote