K4E661611E-TI60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E661611E-TI60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage
Temperature -40 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Bit Organization x16
Power Normal Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4E661611E-TI60 12,000 Get Quote
K4E661611E-TI60 10,000 2003+ Get Quote
K4E661611E-TI60 19,022 2003+ Get Quote
K4E661611E-TI60 20,000 2003+ Get Quote
K4E661611E-TI60 3,580 03+ Get Quote