K4F660812D-TL60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4F660812D-TL60
Brand SAMSUNG
Item DRAM
Part No 8MX8 FP

Product Details

Package TSOP2(32)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Bit Organization x8
Power Low Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4F660812D-TL60 2,258 2005+ Get Quote
K4F660812D-TL60 8,336 2005+ Get Quote
K4F660812D-TL60 8,336 05+ Get Quote
K4F660812D-TL60 12,000 Get Quote
K4F660812D-TL60 18,000 2003+ Get Quote
K4F660812D-TL60 3,060 03+ Get Quote
K4F660812D-TL60 20,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4F640812B-TC60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812B-TL60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812C-TC60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812C-TL60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812D-TC60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812D-TC60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812D-TL60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812E-TC60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F640812E-TL60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C
K4F660812B-TC60 TSOP2(32) 3.3 V 60 NS 0 C~+85 C