K4F660812E-TC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4F660812E-TC50
Brand SAMSUNG
Item DRAM
Part No 8MX8 FP
Alternate Names K4F660812E-TC50000
K4F660812E-TC50T

Product Details

Package TSOP2(32)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Bit Organization x8
Power Normal Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4F660812E-TC50 99 Get Quote
K4F660812E-TC50T 8 Get Quote
K4F660812E-TC50 15,300 2003+ Get Quote
K4F660812E-TC50 3,508 03+ Get Quote
K4F660812E-TC50 20,000 2003+ Get Quote
K4F660812E-TC50000 11,480 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4F640812B-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812B-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812C-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812C-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812D-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812D-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812E-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F640812E-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F660812C-TC50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C
K4F660812C-TL50 TSOP2(32) 3.3 V 50 NS 0 C~+85 C