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Manufacturer Part No | K4F6E3S4HM-GHCL02V |
Brand | SAMSUNG |
Item | LPDDR4 MOBILE |
Part No | 512MX32 LPDDR4 |
Package | FBGA-200 |
Outpack | |
RoHS | RoHS |
Voltage | 1.1 V |
Temperature | -40 C~+105 C |
Speed | 4266 MBPS |
Std. Pack Qty | |
Std. Carton |
Description | Qty | Datecode | |
---|---|---|---|
K4F6E3S4HM-GHCL02V | 80,395 | Get Quote | |
K4F6E3S4HM-GHCL02V | 79,653 | Get Quote | |
K4F6E3S4HM-GHCL02V | 100,000+ | Get Quote | |
K4F6E3S4HM-GHCL02V | 100,000+ | Get Quote | |
K4F6E3S4HM-GHCL02V | 100,000+ | Get Quote | |
K4F6E3S4HM-GHCL02V | 92,050 | Get Quote | |
K4F6E3S4HM-GHCL02V | 100,000+ | Get Quote | |
K4F6E3S4HM-GHCL02V | 100,000+ | Get Quote | |
K4F6E3S4HM-GHCL02V | 3,090 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4UHE3D4AA-GUCL | FBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
K4UHE3D4AA-TFCL | FBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
K4UHE3D4AA-TFCL03V CS | FBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2DS-046 AAT:D | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2DS-046 AAT:D T R | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2DS-046-AAT | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2DS-046AAT:D IC | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2DS-046AATDT ... | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2NP-046 AAT ES:D | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |
MT53D512M32D2NP-046 AAT:D | WFBGA-200 | 1.1 V | 4266 MBPS | -40 C~+105 C |