K4H280838E-TCCC

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4H280838E-TCCC
Brand SAMSUNG
Item DDR1 SDRAM
Part No 16MX8 DDR1

Product Details

Package TSOP2
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 200 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x8
Density 128M
Internal Banks 4 Banks
Power Normal Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4H280838E-TCCC 10,000 2009+ Get Quote
K4H280838E-TCCC 10,000 Get Quote
K4H280838E-TCCC 12,000 Get Quote
K4H280838E-TCCC 6,000 Get Quote
K4H280838E-TCCC 6,988 2003+ Get Quote
K4H280838E-TCCC 17,900 2003+ Get Quote
K4H280838E-TCCC 5,430 03+ Get Quote
K4H280838E-TCCC 20,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4H280838D-TCC4 TSOP2 2.5 V 200 MHZ 0 C~+85 C
K4H280838D-TCC4000 TSOP2 2.5 V 200 MHZ 0 C~+85 C
K4H280838E-TCC4 TSOP2 2.5 V 200 MHZ 0 C~+85 C
K4H280838E-TLCC TSOP2 2.5 V 200 MHZ 0 C~+85 C