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| Manufacturer Part No | K4H281638E-TCBO |
| Brand | SAMSUNG |
| Item | DDR1 SDRAM |
| Part No | 8MX16 DDR1 |
| Package | TSOP2(66) |
| Outpack | |
| RoHS | Leaded |
| Voltage | 2.5 V |
| Temperature | 0 C~+85 C |
| Speed | |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4H281638E-TCBO | 4,000 | Get Quote | |
| K4H281638E-TCBO | 10,000 | 2009+ | Get Quote |
| K4H281638E-TCBO | 10,000 | Get Quote | |
| K4H281638E-TCBO | 5,354 | Get Quote | |
| K4H281638E-TCBO | 12,000 | Get Quote | |
| K4H281638E-TCBO | 6,000 | Get Quote | |
| K4H281638E-TCBO | 6,988 | 2003+ | Get Quote |
| K4H281638E-TCBO | 20,000 | 2003+ | Get Quote |
| K4H281638E-TCBO | 5,580 | 03+ | Get Quote |
| K4H281638E-TCBO | 1,200 | 03+ | Get Quote |